The Ag2S-In2S3-Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6
Identifieur interne : 000185 ( Russie/Analysis ); précédent : 000184; suivant : 000186The Ag2S-In2S3-Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6
Auteurs : RBID : Pascal:08-0142491Descripteurs français
- Pascal (Inist)
- Structure cristalline, Section isotherme, Diffraction RX, Groupe espace, Paramètre cristallin, Diagramme phase, Réseau monoclinique, Sulfure de silicium, Sulfure d'argent, Sulfure d'indium, Sulfure de germanium, Système ternaire, Etat fondu, Composé minéral, Composé de métal de transition, Métal transition, Système AgS In2S3 SiS2, Système AgS In2S3 GeS2.
- Wicri :
- concept : Composé minéral.
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Abstract
Isothermal sections of quasi-ternary systems Ag,S-In2 S3-Si(Ge)S2 at 298 K were constructed using XRD results. Vertical sections Ag2 S-In2 S3, AgInS2-SiS2, AgIn5S8-Ag1 57SiS2.79 were investigated in the Ag2S-In2S3-SiS2 system. Two new quaternary compounds were discovered in the systems, Ag2In2SiS6 (melts incongruently at 1133K) and Ag2In2GeS6. Both compounds crystallize in the monoclinic structure (structural type Ag2In2GeSe6, space group Cc) with lattice parameters a = 1.21379(3)nm, b=0.71681(2)nm, c= 1.21171(4)nm, β= 109.252(2)° and a = 1.22089(4) nm, b= 0.72115(3) nm, c= 1.21978(5)nm, β 109.508(2)°, respectively. Atomic parameters were refined in the isotropic approximation to R1 = 0.0746, Rp = 0.1256 (Ag2In2SiS6)I R1 = 0.0657, Rp = 0.1189 (Ag2In2GeS6).
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The Ag<sub>2</sub>S-In<sub>2</sub>S<sub>3</sub>-Si(Ge)S<sub>2</sub> systems and crystal structure of quaternary sulfides Ag<sub>2</sub>In<sub>2</sub>Si(Ge)S<sub>6</sub></title><author><name sortKey="Sachanyuk, V P" uniqKey="Sachanyuk V">V. P. Sachanyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and inorganic Chemistry, Volyn State University, Voli Ave 13</s1><s2>43025 Lutsk</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>43025 Lutsk</wicri:noRegion></affiliation></author><author><name sortKey="Gorgut, G P" uniqKey="Gorgut G">G. P. Gorgut</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and inorganic Chemistry, Volyn State University, Voli Ave 13</s1><s2>43025 Lutsk</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>43025 Lutsk</wicri:noRegion></affiliation></author><author><name sortKey="Atuchin, V V" uniqKey="Atuchin V">V. V. Atuchin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name sortKey="Olekseyuk, I D" uniqKey="Olekseyuk I">I. D. Olekseyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and inorganic Chemistry, Volyn State University, Voli Ave 13</s1><s2>43025 Lutsk</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>43025 Lutsk</wicri:noRegion></affiliation></author><author><name sortKey="Parasyuk, O V" uniqKey="Parasyuk O">O. V. Parasyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and inorganic Chemistry, Volyn State University, Voli Ave 13</s1><s2>43025 Lutsk</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>43025 Lutsk</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0142491</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0142491 INIST</idno><idno type="RBID">Pascal:08-0142491</idno><idno type="wicri:Area/Main/Corpus">006D58</idno><idno type="wicri:Area/Main/Repository">005C38</idno><idno type="wicri:Area/Russie/Extraction">000185</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-8388</idno><title level="j" type="abbreviated">J. alloys compd.</title><title level="j" type="main">Journal of alloys and compounds</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal structure</term><term>Germanium sulfides</term><term>Indium sulfide</term><term>Inorganic compounds</term><term>Isothermal section</term><term>Lattice parameters</term><term>Melts</term><term>Monoclinic lattices</term><term>Phase diagrams</term><term>Silicon sulfides</term><term>Silver sulfide</term><term>Space groups</term><term>Ternary systems</term><term>Transition element compounds</term><term>Transition elements</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure cristalline</term><term>Section isotherme</term><term>Diffraction RX</term><term>Groupe espace</term><term>Paramètre cristallin</term><term>Diagramme phase</term><term>Réseau monoclinique</term><term>Sulfure de silicium</term><term>Sulfure d'argent</term><term>Sulfure d'indium</term><term>Sulfure de germanium</term><term>Système ternaire</term><term>Etat fondu</term><term>Composé minéral</term><term>Composé de métal de transition</term><term>Métal transition</term><term>Système AgS In2S3 SiS2</term><term>Système AgS In2S3 GeS2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Isothermal sections of quasi-ternary systems Ag,S-In<sub>2</sub> S<sub>3</sub>-Si(Ge)S<sub>2</sub> at 298 K were constructed using XRD results. Vertical sections Ag<sub>2</sub> S-In<sub>2</sub> S<sub>3</sub>, AgInS<sub>2</sub>-SiS<sub>2</sub>, AgIn<sub>5</sub>S<sub>8</sub>-Ag<sub>1</sub> <sub>57</sub>SiS<sub>2.79</sub> were investigated in the Ag<sub>2</sub>S-In<sub>2</sub>S<sub>3</sub>-SiS<sub>2</sub> system. Two new quaternary compounds were discovered in the systems, Ag<sub>2</sub>In<sub>2</sub>SiS<sub>6</sub> (melts incongruently at 1133K) and Ag<sub>2</sub>In<sub>2</sub>GeS<sub>6</sub>. Both compounds crystallize in the monoclinic structure (structural type Ag<sub>2</sub>In<sub>2</sub>GeSe<sub>6</sub>, space group Cc) with lattice parameters a = 1.21379(3)nm, b=0.71681(2)nm, c= 1.21171(4)nm, β= 109.252(2)° and a = 1.22089(4) nm, b= 0.72115(3) nm, c= 1.21978(5)nm, β 109.508(2)°, respectively. Atomic parameters were refined in the isotropic approximation to R<sub>1</sub> = 0.0746, Rp = 0.1256 (Ag<sub>2</sub>In<sub>2</sub>SiS<sub>6</sub>)I R<sub>1</sub> = 0.0657, Rp = 0.1189 (Ag<sub>2</sub>In<sub>2</sub>GeS<sub>6</sub>).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0></fA01><fA03 i2="1"><s0>J. alloys compd.</s0></fA03><fA05><s2>452</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The Ag<sub>2</sub>S-In<sub>2</sub>S<sub>3</sub>-Si(Ge)S<sub>2</sub> systems and crystal structure of quaternary sulfides Ag<sub>2</sub>In<sub>2</sub>Si(Ge)S<sub>6</sub></s1></fA08><fA11 i1="01" i2="1"><s1>SACHANYUK (V. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>GORGUT (G. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>ATUCHIN (V. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>OLEKSEYUK (I. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>PARASYUK (O. V.)</s1></fA11><fA14 i1="01"><s1>Department of General and inorganic Chemistry, Volyn State University, Voli Ave 13</s1><s2>43025 Lutsk</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>3 aut.</sZ></fA14><fA20><s1>348-358</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1151</s2><s5>354000183574350280</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>69 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0142491</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Isothermal sections of quasi-ternary systems Ag,S-In<sub>2</sub> S<sub>3</sub>-Si(Ge)S<sub>2</sub> at 298 K were constructed using XRD results. Vertical sections Ag<sub>2</sub> S-In<sub>2</sub> S<sub>3</sub>, AgInS<sub>2</sub>-SiS<sub>2</sub>, AgIn<sub>5</sub>S<sub>8</sub>-Ag<sub>1</sub> <sub>57</sub>SiS<sub>2.79</sub> were investigated in the Ag<sub>2</sub>S-In<sub>2</sub>S<sub>3</sub>-SiS<sub>2</sub> system. Two new quaternary compounds were discovered in the systems, Ag<sub>2</sub>In<sub>2</sub>SiS<sub>6</sub> (melts incongruently at 1133K) and Ag<sub>2</sub>In<sub>2</sub>GeS<sub>6</sub>. Both compounds crystallize in the monoclinic structure (structural type Ag<sub>2</sub>In<sub>2</sub>GeSe<sub>6</sub>, space group Cc) with lattice parameters a = 1.21379(3)nm, b=0.71681(2)nm, c= 1.21171(4)nm, β= 109.252(2)° and a = 1.22089(4) nm, b= 0.72115(3) nm, c= 1.21978(5)nm, β 109.508(2)°, respectively. Atomic parameters were refined in the isotropic approximation to R<sub>1</sub> = 0.0746, Rp = 0.1256 (Ag<sub>2</sub>In<sub>2</sub>SiS<sub>6</sub>)I R<sub>1</sub> = 0.0657, Rp = 0.1189 (Ag<sub>2</sub>In<sub>2</sub>GeS<sub>6</sub>).</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A30D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Crystal structure</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Section isotherme</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Isothermal section</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Sección isotérmica</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>XRD</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Groupe espace</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Space groups</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Paramètre cristallin</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Lattice parameters</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Diagramme phase</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Phase diagrams</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Réseau monoclinique</s0><s5>11</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Monoclinic lattices</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Sulfure de silicium</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Silicon sulfides</s0><s2>NK</s2><s5>13</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Sulfure d'argent</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Silver sulfide</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Plata sulfuro</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>16</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>16</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Sulfure de germanium</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Germanium sulfides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Système ternaire</s0><s5>19</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ternary systems</s0><s5>19</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etat fondu</s0><s5>21</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Melts</s0><s5>21</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Composé de métal de transition</s0><s5>49</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>49</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Métal transition</s0><s5>50</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Transition elements</s0><s5>50</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Système AgS In2S3 SiS2</s0><s4>INC</s4><s5>63</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Système AgS In2S3 GeS2</s0><s4>INC</s4><s5>64</s5></fC03><fN21><s1>084</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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